| 摘要 |
PURPOSE: A method for fabricating a nitride layer by an atomic layer deposition(ALD) method is provided to improve stability and reduce danger by using an amide compound which is more stable as compared with an alkyl compound. CONSTITUTION: An amide compound of a XIII group element is supplied to the upper surface of a semiconductor substrate having a lower structure and is absorbed to the surface of the substrate by using carrier gas. Purge gas is supplied to remove an absorbed material. Reaction gas is supplied to react with the amide compound absorbed to the surface of the semiconductor substrate. Purge gas is supplied to eliminate a reaction product and a remaining material.
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