| 摘要 |
PURPOSE: A method for fabricating a metal interconnection is provided to improve an electrical characteristic by reducing contact resistance between a metal layer and a barrier layer and by effectively preventing metal ions from being diffused to an underlying layer in forming the metal interconnection. CONSTITUTION: The first barrier layer(22') is formed on a substrate(20). Predetermined ions are stuffed into the first barrier layer. The second barrier layer(23) is formed on the stuffed first barrier layer. A metal layer is formed on the second barrier layer. The ion is at least one of O2, N2, NH3, H2 or Ar. A heat treatment process for stuffing the ion is performed in a gas atmosphere of O2, N2, NH3, H2 or Ar and at a temperature of 300-800 deg.C.
|
