| 摘要 |
PURPOSE: A thin film formation method and a fabrication method of a capacitor using the same are provided to improve a capacitance and a leakage current by depositing an oxide dielectric film using an ALD(Atomic Layer Deposition). CONSTITUTION: An amorphous oxide thin film is formed on a semiconductor substrate(21) by using an atomic layer deposition, wherein the deposition thickness of the amorphous oxide thin film is thinner than a predetermined thickness(d). The amorphous oxide thin film is deformed to a crystalline oxide thin film(23) by annealing. Then, an oxide atomic layer thin film(24) is deposited according to the crystal structure of the crystalline oxide thin film(23) by the ALD. Preferably, the oxide atomic layer thin film(24) is one selected from the group consisting of Al2O3, TiO2 and SrTiO3.
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