发明名称 |
Integrated having a self-aligned Cu diffusion barrier |
摘要 |
A microelectronic device having a self aligned metal diffusion barrier is disclosed. A microelectronic device having a substrate and a dielectric layer on the substrate. A trench having inside walls is formed through the dielectric layer. A lining of a barrier metal is on the inside walls of the trench and a fill metal is in the trench between the linings on the inside walls of the trench. The fill metal and the barrier metal have substantially different removal selectivities. A covering of the barrier metal is on the fill metal and the covering spans the linings on the inside walls of the trench and conforms to the top of the fill metal in the trench.
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申请公布号 |
US6504247(B2) |
申请公布日期 |
2003.01.07 |
申请号 |
US20020058997 |
申请日期 |
2002.01.29 |
申请人 |
ALLIEDSIGNAL INC. |
发明人 |
CHUNG HENRY |
分类号 |
H01L21/312;H01L21/316;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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