| 摘要 |
The present invention discloses a method for fabricating a semiconductor device. In an open bit line cell aligned local interconnection type device having a minimum line width of 1F and a pattern interval of 1F, hard masks are formed on respective conductive layers, and insulating spacers are formed at the side walls thereof, thereby preventing the adjacent conductive layers from being shorted out and maintaining the minimum pattern interval. As a result, a high, integration of the device is achieved, and the process yield and reliability of the device are improved.
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