| 摘要 |
For suppressing decomposition of organic group (for example, CH3 group) during ashing process, which is bonded to Si atom of an organic SOG film or layer for use in flattening process, a method comprises following steps: forming an organic SOG layer directly or through a predetermined film including a hillock protection layer on said lower wiring layer; forming said upper wiring layer on said organic SOG layer without processing of etching back; forming a via hole through an etching process by using a patterned resist layer provided on said upper wiring layer as a mask; performing ashing process with a plasma by making ion or radical which is induced from oxygen gas as a main reactant, under an atmosphere of pressure ranging from 0.01 Torr to 30.0 Torr; and burying said via hole with conductive material so as to electrically connect between said lower wiring layer and said upper wiring layer.
|
