发明名称 |
High performance erasable programmable read-only memory (EPROM) devices with multiple dimension first-level bit lines |
摘要 |
A semiconductor erasable programmable read-only memory (EPROM) device provided for operation with a plurality of first level sense-circuits. The EPROM memory device includes an EPROM memory cell array having a plurality of first-direction first-level bit lines disposed in a parallel manner along a first direction. The EPROM memory device further includes a plurality of word lines intersected with the first-direction first-level bit lines. The EPROM memory cell array further includes a plurality of EPROM memory cells wherein each of the plurality of memory cells being coupled between one of the first-direction first level bit lines and one of the word lines for storing data therein. And, the EPROM memory device further includes a plurality of different-direction first level bit-lines disposed along at least one different direction different from the first direction. Each of the different-direction first-level bit lines connected between a plurality of the first-direction first level bit lines and one of the first level sense-circuits.
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申请公布号 |
US6504745(B2) |
申请公布日期 |
2003.01.07 |
申请号 |
US20010860215 |
申请日期 |
2001.05.18 |
申请人 |
UNIRAM TECHNOLOGY, INC. |
发明人 |
SHAU JENG-JYE |
分类号 |
G11C5/06;G11C7/00;G11C7/10;G11C7/18;G11C8/12;G11C11/406;G11C11/4091;G11C11/4096;G11C11/4097;H01L27/108;(IPC1-7):G11C5/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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