发明名称 |
Semiconductor device and a method of manufacturing the same |
摘要 |
A low-concentration impurity region and a high-concentration impurity region are formed respectively near the lower surface and the upper surface of an undoped polysilicon film by a first and second ion-implanations. A refractory metal film of tungsten or the like is formed on the polysilicon film. The impurities are thermally diffused to form shallow-junctions of source/drain having low-concentration impurities. Lead-out electrodes having a high-impurity concentration can be formed without impeding formation of the source and drain. The refractory metal film is converted into a silicide with the resistance at the interface between the polysilicon film and the silicide kept lowered.
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申请公布号 |
US6504217(B1) |
申请公布日期 |
2003.01.07 |
申请号 |
US20000481693 |
申请日期 |
2000.01.12 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
YOKOZEKI WATARU |
分类号 |
H01L21/225;H01L21/28;H01L21/336;H01L23/485;(IPC1-7):H01L31/062;H01L29/40 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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