发明名称 Plasma processing apparatus
摘要 In the plasma processing apparatus for generating plasma in a processing chamber and processing a wafer by mutual action of electromagnetic waves radiated from a UHF band antenna installed in the processing chamber and a magnetic field formed by a magnetic field generator installed around the processing chamber, a hollow tube having one end in communication with an opening in the side wall of the processing chamber and another end, outside the processing chamber, which has a measuring window of plasma optical emission. By setting the lines of force of the magnetic field formed by the magnetic field generator so as to form an angle relative to the hollow tube, entry of plasma into the hollow tube can be prevented, and adhesion of deposits onto the measuring window can be suppressed, whereby the transmission factor of the measuring window can be kept constant over a long period of use.
申请公布号 US6503364(B1) 申请公布日期 2003.01.07
申请号 US20000651720 申请日期 2000.08.30
申请人 HITACHI, LTD. 发明人 MASUDA TOSHIO;USUI TATEHITO;SHIRAYONE SHIGERU;TAKAHASHI KAZUE;SUEHIRO MITSURU
分类号 H01L21/302;C23F4/00;H01J37/32;H01L21/3065;H05H1/00;H05H1/30;H05H1/46;(IPC1-7):C23C16/00;C23F1/02 主分类号 H01L21/302
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