发明名称 Electrical resistance heater and method for crystal growing apparatus
摘要 An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for placement in a housing of the crystal puller generally above a crucible in spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the housing relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing. The heating element is constructed such that the heating power output generated by the heating element gradually increases from the lower end to the upper end of the heating element.
申请公布号 US6503322(B1) 申请公布日期 2003.01.07
申请号 US20000691994 申请日期 2000.10.19
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 SCHRENKER RICHARD G.;LUTER WILLIAM L.
分类号 C30B29/06;C30B15/00;C30B15/14;(IPC1-7):C30B15/14 主分类号 C30B29/06
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