| 发明名称 |
Semiconductor device with dummy wiring layers |
| 摘要 |
A semiconductor device 100 has wiring layers 20a and 20b and a plurality dummy wiring sections 30 provided at the same level where the wiring layers 20a and 20b are formed. The dummy wiring sections 30 have at least one through hole 32.
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| 申请公布号 |
US6504254(B2) |
申请公布日期 |
2003.01.07 |
| 申请号 |
US20010845819 |
申请日期 |
2001.04.30 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
TAKIZAWA JUN |
| 分类号 |
H01L23/52;H01L21/3105;H01L21/3205;H01L23/528;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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