Semiconductor infrared detecting device

摘要

In a semiconductor infrared image pick-up system, thermo-sensing sections arrayed in a matrix format are supported by a supporting section above a base substrate in a floating state such that they are thermally independent of the base substrate and of each other. Each thermo-sensing section includes first and second semiconductor layers stacked on an insulating layer to form a pn junction. The second layer is in contact with the first layer via an irregular interface to enlarge the surface area of the pn junction. An infrared image is picked up with reference to a change in electric current flowing through the pn junctions, which is caused when the thermo-sensing sections are irradiated with infrared rays in a state where forward bias voltage is applied to the pn junctions.