| 摘要 |
A method for forming an oxide film in a semiconductor device comprises a pre-oxidation process, a main oxidation process and a post-oxidation process. N2O gas is used for the pre-oxidation process, a mixed gas of N2O gas and NH3 gas is used for the main oxidation process, and N2O gas is used for the post-oxidation process. The insulation characteristics of the oxide film are increased by introducing nitrogen, and amount of introduced nitrogen can be regulated by the controlling of amount of NH3 gas. Also, the problems encountered when NH3 gas and N2O gas are used separately for the oxidation process can be solved by using of the mixed gas of NH3 gas and N2O gas.
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