发明名称 |
Power MOSFET device, structures employing the same and methods of fabrication |
摘要 |
A semiconductor device, full bridge converter employing the same, and methods of fabrication thereof are provided. The device includes a vertical MOSFET having a parasitic body diode at a junction face between a body region and a semiconductor layer thereof. The parasitic body diode is suppressed by having no direct electrical connection to the body region, resulting in the parasitic body diode being open-circuited within the MOSFET. Co-packaged with the MOSFET is a separate bypass diode connected across a source and a drain of the MOSFET. The bypass diode functions to clamp the voltage across the MOSFET without employing the parasitic, electrically isolated body diode of the MOSFET.
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申请公布号 |
US6504208(B2) |
申请公布日期 |
2003.01.07 |
申请号 |
US20010794937 |
申请日期 |
2001.02.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOSCO FRANK E.;GALYON GEORGE T.;MAZZUCA STEVEN J.;SINGH PRABJIT |
分类号 |
H01L29/06;H01L29/08;H01L29/41;H01L29/78;H02M7/5387;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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