发明名称 |
Contact structure for a semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor contact structure for a merged dynamic random access memory and a logic circuit (MDL) and a method of manufacturing the contact structure to: (i) a cell contact pad; (ii) at least one active region; and (iii) at least one gate electrode simulaneously, whereby an electric short between the gate electrodes and the cell contact pad is avoided, even in the event a lithographic misalignment occurs and whereby it is possible to obtain an overlap margin in the cell region, even with an improved metal contact to the gate electrode in the peripheral circuit region of the semiconductor device.
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申请公布号 |
US6503789(B1) |
申请公布日期 |
2003.01.07 |
申请号 |
US20000610293 |
申请日期 |
2000.07.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HONG KI;LEE DUCK HYUNG |
分类号 |
H01L27/108;H01L21/60;H01L21/8242;H01L27/105;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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