发明名称 |
Fabrication process for a semiconductor device with an isolated zone |
摘要 |
The semiconductor device comprises a semiconductor substrate (SB) having locally at least one zone (ZL) terminating in the surface of the substrate and entirely bordered, along its lateral edges and its bottom, by an insulating material so as to be completely isolated from the rest of the substrate. The horizontal isolating layer may be a layer of constant thickness or a crenellated layer.
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申请公布号 |
US6503812(B2) |
申请公布日期 |
2003.01.07 |
申请号 |
US20020044829 |
申请日期 |
2002.01.11 |
申请人 |
STMICROELECTRONICS S. A. |
发明人 |
MENUT OLIVIER;BOUCHE GUILLAUME;JAOUEN HERVE |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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