发明名称 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
摘要 A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises:(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and(B) an organic solvent.
申请公布号 US6503633(B2) 申请公布日期 2003.01.07
申请号 US20010860914 申请日期 2001.05.21
申请人 JSR CORPORATION 发明人 NISHIKAWA MICHINORI;HASEGAWA KOUICHI;HAYASHI EIJI;YAMADA KINJI
分类号 H01L21/312;H01L21/316;(IPC1-7):C08G77/16;C08G77/18 主分类号 H01L21/312
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