| 摘要 |
PURPOSE:To enhance level of integration, and improve operation reliability without increasing the number of processes, in a semiconductor integrated circuit device provided with a ROM. CONSTITUTION:In a semiconductor integrated circuit device provided with a ROM, a conducting film 12B connected with a fixed potential (VSS: for example 0V) is formed on the upper layer of a gate electrode (word line) 7 of a) MISFET constituting a ROM. The conducting film 12B is formed by the same process as a leading-out electrode 12A. |
