| 摘要 |
A method for forming a capacitor for semiconductor devices is provided. In the method, a storage electrode is formed on a semiconductor wafer, and the surface of the storage electrode is nitridated so as to prevent reduction of the dielectric strength by an oxide layer that is possibly formed on the storage electrode. Then, a dielectric layer is formed of a LixTa1-xO3 layer having a stable structure and a large dielectric constant (epsi=45), and a plate electrode is formed on the dielectric layer, thereby resulting in a capacitor. The capacitor has high capacitance values enough for high-integration semiconductor devices with smaller sizes.
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