发明名称 Semiconductor integrated circuit device having power reduction mechanism
摘要 A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.
申请公布号 US6504402(B2) 申请公布日期 2003.01.07
申请号 US20020051013 申请日期 2002.01.22
申请人 发明人
分类号 G11C5/00;H01L27/02;H03K3/356;H03K19/00;H03K19/0185;H03K19/094;H03K19/0948;H03K19/096;H03K19/20;(IPC1-7):H03K19/094 主分类号 G11C5/00
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