| 发明名称 |
Method of reducing planarization defects |
| 摘要 |
A method of reducing the planarization defects produced during the manufacture of semiconductor devices. A sacrificial layer, having defects produced during a interconnection feature planarization step, is removed prior to the formation of subsequent layers to reduce the replication of unwanted defects.
|
| 申请公布号 |
US6503827(B1) |
申请公布日期 |
2003.01.07 |
| 申请号 |
US20000605806 |
申请日期 |
2000.06.28 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOMBARDIER SUSAN G.;FEENEY PAUL M.;GEFFKEN ROBERT M.;HORAK DAVID V.;RUTTEN MATTHEW J. |
| 分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
