Semiconductor device having early operation high voltage generator and high voltage supplying method therefor

摘要

A semiconductor device for performing a static random access memory operation includes a plurality of refresh type memory cells provided at intersections of a plurality of word lines and a plurality of bit lines, a high voltage generator providing a voltage higher than a power source voltage to a stand-by high voltage output node in response to a driving control signal activated in a memory cell access operation period, an internal circuit related to word line driving for selecting a word line among the plurality of word lines using the high voltage in response to command information and address information, and a driving control signal generator generating the driving control signal in response to the command information to operate the high voltage generator prior to initial charge consumption in the stand-by high voltage output node during the memory cell access operation period.