发明名称 Physical vapor target constructions
摘要 The invention encompasses a method of treating a physical vapor deposition target. The target has a sputtering surface and a sidewall edge at a periphery of the sputtering surface. The method comprises pressing a tool against the sidewall edge to form a distribution of imprints in the sidewall edge of the target. The tool is then removed from the sidewall edge, leaving the imprints extending into the sidewall edge. The invention also encompasses a physical vapor deposition target. The target includes a sputtering surface having an outer periphery, and a sidewall edge along the outer periphery of the sputtering surface. The sidewall edge has a repeating pattern of imprints extending therein.
申请公布号 US6503380(B1) 申请公布日期 2003.01.07
申请号 US20000687947 申请日期 2000.10.13
申请人 HONEYWELL INTERNATIONAL INC. 发明人 BUEHLER JANE
分类号 C23C14/34;C23C14/56;H01L21/285;(IPC1-7):C23C14/34;B32B23/02;B32B15/04 主分类号 C23C14/34
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