| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve photo sensitivity by enhancing EHP(Electron-Hole Pair) by forming a photodiode using germanium(Ge) having a relatively low band-gap energy compared to silicon. CONSTITUTION: A trench is formed in a photodiode region(PD) by selectively etching a semiconductor layer(20). The first impurity region(21) is formed by filling germanium(Ge) doped with n-type dopants into the trench. After forming a field oxide(22) to connect with one side of the first impurity region(21), gate electrodes(23,24) are formed to connect with other side of the first impurity region(21). The second impurity region(Po) is formed on the first impurity region(21).
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