| 摘要 |
PURPOSE: A fabrication method of a ferroelectric memory device is provided to simplify manufacturing processes by simultaneously forming a bit line plug and a capacitor plug, and a lower electrode and a bit line. CONSTITUTION: A first interlayer dielectric(35) is formed on a semiconductor substrate(31) having a transistor. A bit line contact hole and a capacitor contact hole are formed by selectively etching the first interlayer dielectric(35). A bit line plug(36a) and a capacitor plug(36b) are simultaneously filled into the contact holes. A lower electrode(38), a ferroelectric film(39) and an upper electrode(40) are sequentially formed on the resultant structure. A bit line(41) is sequentially stacked on the lower electrode(38) and the ferroelectric film(39).
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