| 摘要 |
PURPOSE: An ESD(Electro-Static Discharge) protection circuit of a semiconductor device is provided to improve a protection capability by enhancing a contact area between silicon and metal. CONSTITUTION: The ESD protection circuit is provided with a plurality of MOS transistors. In the MOS transistors, a long gate(70) is arranged on an active region(50). A contact(65) is electrically connected between silicon and metal formed on a source and/or a drain region. At this time, the length of the contact(65) is long. That is, the contact area between silicon and metal is increased, so that the protection capability of ESD is improved.
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