| 摘要 |
PURPOSE: A package method of a semiconductor device is provided to improve an adhesive force between an insulating layer and a metal film and to prevent a turn-on of semiconductor devices. CONSTITUTION: After forming an N-well(110) on a semiconductor substrate(100), a field oxide(120), a first and second insulating layer(130,140) are sequentially stacked on the N-well. A contact hole is formed to expose the N-well(110) by sequentially etching the second and first insulating layer(140,130) and the field oxide(120). A tungsten contact(160) is formed by filling tungsten film into the contact hole. A metal film(170) is deposited on the resultant structure. Then, an N-type silicon pattern(180) is formed on the metal film(170).
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