| 摘要 |
PURPOSE: A method for forming a contact plug is provided to prevent a contact open failure according to SAC(Self-Aligned Contact) by previously forming an insulating layer between plugs. CONSTITUTION: After forming a field oxide(22) at a semiconductor substrate(21), a plurality of word line(23) are formed on the substrate(21). A polyimide layer and a hard mask are sequentially formed on the resultant structure. A contact mask is formed on the hard mask in order to expose the surface of the polyimide layer. After sequentially etching the hard mask ad the polyimide layer using the contact mask, a low temperature oxide layer(29) is filled into the etched pattern. After removing the polyimide layer, a polysilicon plug(30) is filled between the low temperature oxide layers(29).
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