| 摘要 |
PURPOSE: A fabrication method of a semiconductor device is provided to prevent a generation of voids in a gap-fill by reducing total aspect ratio using a flowable oxide layer as a sacrificial layer. CONSTITUTION: After forming bit lines(1) as conductive patterns on a semiconductor substrate, a flowable oxide layer(2) is formed on the resultant structure by coating and sintering. A contact hole is formed to expose the semiconductor substrate by selectively etching the flowable oxide layer(2). A polysilicon layer(3) is filled into the contact hole by depositing polysilicon and polishing. After selectively removing the flowable oxide layer(2), an interlayer dielectric is then formed on the resultant structure.
|
