发明名称 |
METHOD FOR FORMING OVERLAY MEASUREMENT PATTERN OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for forming an overlay measurement pattern of semiconductor devices is provided to prevent a collapse of an inner box caused to bowing in a resist reflow by using a compensation pattern. CONSTITUTION: The overlay measurement pattern(20) comprises an outer box(11) of quadrate structure and an inner box(12) of quadrate structure formed in the outer box(11). The overlay measurement pattern(20) further includes at least one compensation pattern(13). The compensation patterns(13) are formed at each vertex of the inner box(12) for compensating the bowing of a resist.
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申请公布号 |
KR20030000840(A) |
申请公布日期 |
2003.01.06 |
申请号 |
KR20010036994 |
申请日期 |
2001.06.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG, JIN HUI;SIM, GWI HWANG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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