METHOD FOR PASSIVATION OF HYDRARGYRUM-CADMIUM-TELLURIUM JUNCTION DIODE USING THERMAL PROCESS UNDER CADMIUM/HYDRARGYRUM ATMOSPHERE

摘要

PURPOSE: A method for passivation of an HgCdTe(hydrargyrum-cadmium-tellurium) junction diode using a thermal process under Cd/Hg(cadmium/hydrargyrum) atmosphere is provided to deposit an HgCdTe passivation layer on the HgCdTe junction diode without depositing a Cd layer or a CdTe layer by performing only the thermal process under Cd/Hg atmosphere. CONSTITUTION: A double layered wafer(30) is formed with an HgCdTe light absorbing layer(32) and an HgCdTe cap layer. Each diode(36) is formed by etching the HgCdTe cap layer. A HgCdTe passivation layer(48) is formed on a whole surface of the above structure by performing a thermal process under Cd atmosphere. An insulating layer(50) is deposited on an upper surface of the HgCdTe passivation layer(48). A metal contact portion(52) is formed by performing a photo-etch process.