发明名称 IMAGE SENSOR
摘要 PURPOSE: An image sensor is provided to reduce a focusing distance and to effectively improve a focusing efficiency by forming a microlens made of a nitride layer and an oxynitride layer on a passivation layer. CONSTITUTION: A passivation layer(9) is formed on a substrate(1) having a lower layer(4). At this time, the passivation layer(9) having a trapezoid structure is sequentially stacked on a nitride layer and an oxynitride layer. A spacer(10) is formed at both sidewalls of the passivation layer(9). A microlens is composed of the passivation layer(9) and the spacer(10). A photoresist layer(11) is formed on the entire surface of the resultant structure for planarizing. A color filter(12) is formed on the photoresist layer(11) overlapped with the microlens.
申请公布号 KR20030001071(A) 申请公布日期 2003.01.06
申请号 KR20010037401 申请日期 2001.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HUH, EUN MI
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
代理机构 代理人
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