| 摘要 |
PURPOSE: A metal wiring formation method of a semiconductor device is provided to restrain the generation of voids by forming an alumina(Al2O3) layer on an aluminum wire. CONSTITUTION: An aluminum metal film is formed on a semiconductor substrate. A metal wiring is formed by selectively etching the aluminum film using a metal pattern mask. A passivation layer is formed at both sides of the metal wiring by using oxygen gas or oxygen-containing gas. At this time, an alumina(Al2O3) layer is used as the passivation layer formed at both sides of the metal wiring. Also, the passivation layer is formed by using O2 plasma treatment, H2O passivation treatment, O3 treatment, N2O plasma treatment, or O2 furnace treatment.
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