| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to increase capacitance by effectively increasing surface area of a storage node electrode. CONSTITUTION: A first insulating layer(38) is formed on a semiconductor substrate(20) having a transistor. After forming a first nitride layer, a first contact hole is formed by sequentially etching the first nitride layer and the first insulating layer(38). A storage node plug(42) is formed into the first contact hole. A first oxide layer(52), a second nitride layer and a second oxide layer(56) are sequentially formed on the entire surface of the resultant structure. A capacitor structure is defined by selectively etching the second oxide layer(56), the second nitride layer and the first oxide layer(52). The second nitride layer is isotropically etched by using the first nitride layer as a target, thereby forming a bar-shaped nitride pattern(54a). Then, a conductive layer(60) as a storage node is formed on the resultant structure.
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