METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A concave-type capacitor formation method of semiconductor devices is provided to simplify manufacturing processes and to improve yield by forming a storage electrode using a micro-loading effect. CONSTITUTION: A storage conductive layer is formed on a semiconductor substrate(111). A photoresist layer is coated on the storage conductive layer. A photoresist pattern(113) is formed by exposing and developing the photoresist layer using a phase shift mask. The phase shift mask includes a region(103) having 0 degree phase and a region(101) having 108 degree phase. At this time, a latent image(105) has a dark intensity at the boundary between the region(103) having 0 degree phase and the region(101) having 108 degree phase. Thereby, a planar structure of a storage electrode is formed at the boundary between the region(103) having 0 degree phase and the region(101) having 108 degree phase.