发明名称 METHOD FOR MANUFACTURING PHASE SHIFT MASK
摘要 PURPOSE: A method for manufacturing a phase shift mask is provided to improve the uniformity of phase shifting and to prevent a micro-loading effect by forming an etch stopper between a transparent substrate and a phase shifting layer. CONSTITUTION: An etch stopper(22) is formed on a transparent substrate(20). A phase shifting layer is formed on the etch stopper(22). At this time, the etch stopper(22) has a high etching selectively compared to the phase shifting layer. A light shielding layer is formed on the phase shifting layer. By sequentially etching the light shielding layer and the phase shifting layer using the etch stopper(22), a phase shifting pattern(24) and a light shielding pattern(26) are formed.
申请公布号 KR20030001561(A) 申请公布日期 2003.01.06
申请号 KR20010037044 申请日期 2001.06.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HONG IK;SIM, GYEONG JIN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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