发明名称 |
METHOD FOR MANUFACTURING PHASE SHIFT MASK |
摘要 |
PURPOSE: A method for manufacturing a phase shift mask is provided to improve the uniformity of phase shifting and to prevent a micro-loading effect by forming an etch stopper between a transparent substrate and a phase shifting layer. CONSTITUTION: An etch stopper(22) is formed on a transparent substrate(20). A phase shifting layer is formed on the etch stopper(22). At this time, the etch stopper(22) has a high etching selectively compared to the phase shifting layer. A light shielding layer is formed on the phase shifting layer. By sequentially etching the light shielding layer and the phase shifting layer using the etch stopper(22), a phase shifting pattern(24) and a light shielding pattern(26) are formed.
|
申请公布号 |
KR20030001561(A) |
申请公布日期 |
2003.01.06 |
申请号 |
KR20010037044 |
申请日期 |
2001.06.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HONG IK;SIM, GYEONG JIN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|