| 摘要 |
PURPOSE: A method for forming bit lines is provided to improve an integration degree and a reproducibility of photoresist pattern by forming polymer on the photoresist pattern using an ArF photo lithography. CONSTITUTION: After forming a first interlayer dielectric(12) on a substrate(10) having an active layer(11), a bit line contact plug(13) is formed by selectively etching the first interlayer dielectric(12). A second interlayer dielectric(14) and an ArF photoresist pattern are sequentially formed on the resultant structure. By reflowing the ArF photoresist pattern, polymer is formed on the ArF photoresist pattern. A contact hole is formed to expose the surface of the bit line contact plug(13) by selectively etching the second interlayer dielectric(14) using the ArF photoresist pattern as a mask. A bit line(18) is formed in the contact hole.
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