| 摘要 |
PURPOSE: A method for fabricating a photoresist layer pattern of a semiconductor device is provided to improve production yield and reliability, by using conventional equipment and by decreasing the number of mask processes. CONSTITUTION: A layer(13) to etch is formed on a semiconductor substrate(11). A negative tone photoresist layer is formed on the layer to etch. A partial surface of the photoresist layer is exposed by using an exposure mask exposing a portion reserved for a pattern. An anti-reflective precursor is formed on the photoresist layer. The anti-reflective precursor is diffused to the firstly-exposed portion of the photoresist layer to couple the anti-reflective precursor to the firstly-exposed portion of the photoresist layer. The second exposure process is performed on the entire surface of the photoresist layer. The photoresist layer is developed to form a photoresist layer pattern(21) composed of the firstly-exposed portion of the photoresist layer coupled to the anti-reflective precursor.
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