摘要 |
1,037,146. Semi-conductor devices. SIEMENS & HALSKE A.G. Jan. 11, 1965 [Jan. 10, 1964], No. 1130/65. Heading H1K. In a transport reaction in which a gas reacts with a semi-conductor body to form a gaseous compound which decomposes on the surface of a substrate of semi-conductor material placed parallel to the body to epitaxially deposit a layer of the material of the body on the substrate, the body contains at least two layers of different conductivity and/or conductivity type which are transported to the substrate. As shown, a silicon body 2 of high resistivity material 3 and having a diffused surface layer 4 rests on a graphite heating element 1 coated with silicon. A silicon substrate 7 is supported over body 2 by quartz spaces 6 and the assembly is heated in a reaction gas in a closed or flowing system. The substrate 7 is at a lower temperature than body 2 and part of surface layer 4 followed by a thin layer of the underlying region 3 are transported on to the adjacent face of substrate 7 to form a junction 5, Fig. 2 (not shown). If the reaction is performed in a flow of a halogen hydrogen compound of a semiconductor material mixed with a carrier gas, semi-conductor material is deposited on the surface of substrate 7 remote from body 2 and may be doped by introducing an impurity into the gas flow. The reaction gas may be a halogen, a hydrogen halide, or water vapour and hydrogen sulphide mixed with hydrogen or argon and the reaction may be performed at a low pressure. The substrate may rest directly on the body, surface irregularities providing sufficient access for the reaction gas. The body and substrate may be of different semiconductor materials with similar lattice constants, for example germanium may be deposited on silicon or gallium arsenide may be deposited on germanium. The surface of the substrate remote from the body may be covered with a plate of quartz, corundum, or silicon carbide, preferably of silicon carbide at least adjacent the substrate, to prevent deposition of semi-conductor material.
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