| 摘要 |
<p>PURPOSE: To solve the problem that pad electrodes are disposed in an L shape along chip corners so as to reduce the cost by shrinking the chip size in a GaAs FET adopted for a high-frequency device. CONSTITUTION: In order to realize a further shrinkage of the chip size and improve high-frequency characteristics of a compound semiconductor device, the pad electrodes are disposed at respective corners of the chip, and the FET is disposed at the center with inclination of 45°to the side of the chip. Thus, the chip size can be further reduced, and a lower cost GaAs FET than that of a silicon semiconductor of an ultra-high frequency can be realized.</p> |
