METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING MULTI-RESISTORS AND CAPACITOR OF HIGH CAPACITANCE

摘要

PURPOSE: A method for fabricating a semiconductor device having a multi-resistors and a capacitor of high capacitance is provided to form resistors having various resistance values and fabricate the capacitor of high capacitance within the same area as an existing semiconductor device. CONSTITUTION: A polysilicon layer of an embossed shape is deposited on a semiconductor substrate(110). A highly doped region and a lightly doped region are formed by implanting dopants on the embossed polysilicon layer. A lower electrode(130E) of a capacitor is formed by patterning the embossed polysilicon layer. The lower electrode(130E) is formed with two resistors of the highly doped region, two resistors of the lightly doped region, and a plurality of uneven portions. A dielectric layer(140) is formed on the lower electrode(130E). An upper electrode(150) is formed on the dielectric layer(140).