| 摘要 |
PURPOSE: A semiconductor memory device is provided to increase a sensing margin of data by boosting an electric potential of a storage node opposite to a plate. CONSTITUTION: A voltage generation portion(10) is formed with a cell plate voltage generation portion(11) and a precharge voltage generation portion. The cell plate voltage generation portion(11) is connected with a cell plate of a DRAM device. The cell plate voltage generation portion(11) performs an operation after a supply voltage is applied to the cell plate voltage generation portion(11) and a predetermined time is delayed. The precharge voltage generation portion(12) is connected with a bit line at a standby operation of the DRAM in order to provide an initial electric potential to the bit line. A comparison and latch circuit portion(13) received a command and controls a transistor.
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