| 摘要 |
PURPOSE: A fabrication method of dual damascene wiring is provided to easily achieve fine patterns, to minimize generation of polymers and to simplify manufacturing processes by using a hard mask having double pattern. CONSTITUTION: A diffusion barrier layer, an interlayer dielectric having a first region and a second region including the first region, a first hard mask layer are sequentially formed on a semiconductor substrate having a lower metal wiring. The first hard mask layer formed on the first region is selectively removed. After forming a second hard mask layer, a hard mask having double pattern is formed by selectively etching the second hard mask formed on the second region. The exposed interlayer dielectric of the first region is etched by using the hard mask. After removing the hard mask formed on the second region, a via hole and a trench are simultaneously formed by etching the exposed interlayer dielectric.
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