METHOD FOR FORMING SEMICONDUCTOR ROM DEVICE

摘要

PURPOSE: A method for forming a semiconductor ROM device is provided to simplify a fabricating process and prevent a short circuit phenomenon between gate lines by forming a flat cell type semiconductor ROM device. CONSTITUTION: A gate insulating layer is formed on a semiconductor substrate(100). The first polysilicon layer and a capping layer are sequentially stacked on the gate insulating layer by using a CVD(Chemical Vapor Deposition) method. A photoresist pattern is formed on the capping layer. The capping layer and the first conductive layer are etched by using the photoresist pattern as an etch mask. A line pattern of the first conductive layer is formed by etching the capping layer and the first conductive layer. An ion implanting process is performed on the substrate(100) by using the line pattern as an ion implanting mask. A thermal oxide layer(173) is formed on the substrate(100) except for the line pattern in order to locate a buried doped layer(151) under the thermal oxide layer(173). The capping layer is removed. The second conductive layer(181) is stacked on the line pattern. A gate line including a gate electrode is formed by patterning the second conductive layer and the first conductive layer of the line pattern.