| 摘要 |
PURPOSE: To provide a semiconductor device in which p-well regions can be prevented from being turned to a floating state when trench capacitors are formed on a SOI substrate and stable operations of cell transistors can be ensured, and provide a manufacturing method thereof. CONSTITUTION: The substrate 21-1 is connected to the p-well regions 21-2 by side-etching a buried oxide film 21-3 from the inside of each deep trench 22 and burying polysilicon or forming a conductive layer by an epitaxial growth. When the trench capacitors are formed on the SOI substrate, operations of cell transistors 26 can be made stable by preventing p-well regions 21-2 in which elements are formed from being turned to a floating state.
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