| 摘要 |
PURPOSE: A contact formation method is provided to prevent the increase of a contact resistance and a leakage current by performing N2 or NH3 plasma treatment after forming a contact. CONSTITUTION: After forming the first conductive layer(31) on a substrate(30), an insulating layer on which a lower oxide layer, an SOG(Spin On Glass) and an upper oxide layer(34) are sequentially stacked is then formed on the first conductive layer. A contact hole is formed to expose the surface of the first conductive layer(31) by selectively etching the insulating layer. A nitride layer(35) is formed on the resultant structure by performing a plasma treatment using N2 or NH3. After removing the nitride layer(35) formed on bottom of the contact hole, the first barrier film(36) is formed on the resultant structure. The second barrier film(37) is formed by nitrifying the surface of the first barrier film. The second conductive layer(38) is formed on the second barrier film(37).
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