| 摘要 |
PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided to prevent gate resistance from increasing by preventing abnormal oxidation of a tungsten layer pattern, and to improve an operating characteristic and reliability by increasing oxidation tolerance in a process using a subsequent nitride layer. CONSTITUTION: An isolation layer(13) for defining an active region is formed in a semiconductor substrate(11). A gate insulation layer, a polycrystalline silicon layer, a WNx layer and a W layer are sequentially formed on the semiconductor substrate. The stacked structure is etched to form a gate insulation layer pattern(15), a polycrystalline silicon layer pattern(17), a WNx layer pattern and a W layer pattern(21) by using a gate electrode mask as an etch mask. A predetermined thickness of a capping silicon layer is formed on the resultant structure. The capping silicon layer is selectively oxidized to form a silicon dioxide layer(25) while the WNx layer pattern is formed of a WSiN layer pattern(20).
|
