| 摘要 |
PURPOSE: An extreme ultraviolet mask is provided to prevent a decrease of an aerial image generated by diffused reflection of a sidewall of an absorption layer formed on a reflection layer, by forming an absorption layer between the reflection layers such that the absorption layer has the same thickness as the reflection layer. CONSTITUTION: A reflection region is defined in a substrate(31). The reflection layer(33) is formed in the reflection region on the substrate. The absorption layer(35) is formed between the reflection layers on the substrate. The reflection layer is either one of Mo/Si, Mo/Be, MoRu/Be or Ru/Be.
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