发明名称 |
DRY ETCHING SYSTEM WITH BUFFER CHAMBER |
摘要 |
PURPOSE: A dry etching system with a buffer chamber is provided to maintain a uniform flow of reaction gas inside a chamber and to minimize generation of particles inside the chamber by forming the buffer chamber in a predetermined space between the chamber and a vacuum pump. CONSTITUTION: A dry etching process is performed in the chamber(22). An inlet through which the reaction gas(61) is supplied is formed in one side of the chamber. An outlet through which the residue including the reaction gas after the dry etch process is exhausted is formed in the other side opposite to the inlet. The vacuum pump makes the inside of the chamber vacuum, connected to the outlet of the chamber. The vacuum pump exhausts the residue including the reaction gas after the dry etch process and induces the flow of the reaction gas inside the chamber.
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申请公布号 |
KR20030000815(A) |
申请公布日期 |
2003.01.06 |
申请号 |
KR20010036956 |
申请日期 |
2001.06.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, YONG JUN |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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