| 摘要 |
PURPOSE: A method for fabricating a ferroelectric memory device is provided to prevent the generation of a metal contact of a high aspect ratio by using a lower electrode as a high aspect ratio contact so that an aspect ratio is decreased. CONSTITUTION: The lower electrode(150) is formed on a buried contact(160) of a semiconductor substrate(100). The first interlayer dielectric is deposited on the resultant structure. A capacitor formation contact hole is formed in an active region by using a mask. After a ferroelectric layer(180) is deposited on the resultant structure to fill the capacitor formation contact hole, the resultant structure is planarized by a chemical mechanical polishing(CMP) process. An upper electrode is formed on the ferroelectric layer. After the second interlayer dielectric is deposited on the resultant structure, an etch process is performed to form the metal contact.
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